New PDF release: Advances in Photovoltaics: Part 2

By Gerhard P. Willeke, Eicke R. Weber

ISBN-10: 0123813433

ISBN-13: 9780123813435

Semiconductors and Semimetals has distinctive itself throughout the cautious choice of famous authors, editors, and individuals. initially well known because the ''Willardson and Beer'' sequence, it has succeeded in publishing a number of landmark volumes and chapters. The sequence publishes well timed, hugely proper volumes meant for long term impression and reflecting the actually interdisciplinary nature of the sector. The volumes in Semiconductors and Semimetals were and may remain of significant curiosity to physicists, chemists, fabrics scientists, and equipment engineers in academia, medical laboratories and smooth undefined. This quantity is the second of a suite of seven with regards to photovoltaics.

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Hence, it is assumed that there the metal is in direct contact to the base. An alternative explanation is the in-diffusion of some metallic impurities from the metal paste into the underlying material. These impurities may generate a high local density of gap states in the depletion region, which may lead to depletion region recombination (J 02), hopping conduction, or trap-assisted tunneling (see next section). In 2009, Wagner et al. , 2009a), which was unknown before and was described in more detail by Bauer (2009).

2000). These authors have observed that the lifetime increases slower than expected for a single SRH center, and they explain this by the superposition of the action of two different SRH centers. 13 shows the results of their analysis. Since this kind of analysis is important for understanding the physics of multicrystalline solar cells, it will be explained here in detail. In Fig. 13, the inverse lifetime, measured by QSSPC on a solar cell without metallization, is plotted versus the excess carrier concentration.

12 shows an image of the diffusion current density of the cell used also for Fig. , 2011a). Here the correlation is very good, the regions with locally increased diffusion current correspond to defect-containing regions with low EL signal. In these regions teff is reduced, leading according to Eqs. 9) to a locally increased J 01. In this respect, the diffusion current behaves as theoretically expected. The series resistance-induced vertical dark stripes in the EL image are not reflected in the DLIT image, since the latter is only linearly, but the EL image is exponentially dependent on the local voltage.

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Advances in Photovoltaics: Part 2 by Gerhard P. Willeke, Eicke R. Weber

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